Table 3: Comparison of eigen energies at Γ point of GaN and InN with experimental and theoretical results (in eV).

 

Eg (eV)

HSE

EPM

Th.

Exp.

GaN

3.39

3.44

3.00; 3.5 [27,28]

3.44; 3.50 [29,30]

InN

0.9

0.77

0.17, 0.69 [20,25]

0.9 [31], 0.65-0.8 [26]